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| BFR740L3 NPN Silicon Germanium RF Transistor * High gain ultra low noise RF transistor * Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more * Ideal for CDMA and WLAN applications * Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.8 dB at 6 GHz * High maximum stable gain Gms = 24 dB at 1.8 GHz * Gold metallization for extra high reliability * 150 GHz fT-Silicon Germanium technology ESD (Electrostatic discharge) sensitive device, observe handling precaution! 1 2 3 Type BFR740L3 Maximum Ratings Parameter Marking R7 Pin Configuration 1=B 2=C 3=E Package TSLP-3-8 Symbol VCEO Value Unit Collector-emitter voltage TA > 0C TA 0C V 4 3.5 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 94C VCES VCBO VEBO IC IB Ptot Tj TA T stg 13 13 1.2 30 3 160 150 -65 ... 150 -65 ... 150 mW C mA Junction temperature Ambient temperature Storage temperature 1T is measured on the collector lead at the soldering point to the pcb S 1 2005-10-17 BFR740L3 Thermal Resistance Parameter Symbol RthJS Value 350 Unit Junction - soldering point1) K/W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 25 mA, VCE = 3 V, pulse measured 1For calculation of R thJA please refer to Application Note Thermal Resistance Unit max. 30 100 3 400 V A nA A - typ. 4.7 250 V(BR)CEO ICES ICBO IEBO hFE 4 160 2 2005-10-17 BFR740L3 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 25 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = Z Sopt IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 25 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 25 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 25 mA, VCE = 3 V, Z S = ZL = 50 , f = 1.8 GHz f = 6 GHz Third order intercept point at output2) VCE = 3 V, I C = 25 mA, Z S=ZL=50 , f = 1.8 GHz 1dB Compression point at output IC = 25 mA, VCE = 3 V, Z S=ZL=50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz - 42 0.1 0.16 GHz pF Ccb Cce - 0.18 - Ceb - 0.38 - F G ms 0.5 0.8 24 - dB dB G ma - 14.5 - dB |S 21e|2 IP 3 P-1dB 21.5 12 25 11 - dB dBm 3 2005-10-17 BFR740L3 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 180 mW 10 3 140 120 100 K/W RthJS Ptot 10 2 80 60 40 20 0 0 10 1 -7 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 15 30 45 60 75 90 105 120 C 150 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = (tp) 10 2 Collector-base capacitance Ccb = (V CB) f = 1 MHz 0.2 Ptotmax /PtotDC 0.18 - 0.16 0.14 Ccb [pF] 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.12 0.1 0.08 0.06 0.04 0.02 10 0 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 tp 0 2 4 6 8 10 12 VCB [V] 4 2005-10-17 BFR740L3 Third order Intercept Point IP3 = (IC) (Output, ZS = ZL = 50 ) VCE = parameter, f = 1.8 GHz 30 50 Transition frequency fT = (IC) VCE = parameter, f = 2 GHz 27 4.00V 45 2V to 4V 40 24 3.00V 21 35 18 30 IP3 [dBm] 15 fT [GHz] 25 2.00V 12 20 9 15 1.00V 6 10 1.00V 3 5 0.75V 0.50V 0 0 5 10 15 20 25 30 35 0 0 5 10 15 20 25 30 35 I [mA] C I [mA] C Power gain Gma, Gms = (f) VCE = 3 V, I C = 25 mA Power gain Gma, Gms = (IC) VCE = 3 V f = parameter 55 34 50 32 30 45 28 40 26 35 0.90GHz 24 1.80GHz 2.40GHz 3.00GHz 4.00GHz 5.00GHz 6.00GHz G [dB] 30 G [dB] Gms |S21| 2 22 25 20 18 20 16 15 14 10 12 5 0 1 2 3 4 5 6 10 0 5 10 15 20 25 30 35 f [GHz] IC [mA] 5 2005-10-17 BFR740L3 Power gain Gma, Gms = (VCE) IC = 25 mA f = parameter 36 Noise figure F = (I C) VCE = 3 V, f = parameter ZS = ZSopt 2 1.8 1.6 1.4 1.2 F [dB] f = 6GHz f = 5GHz f = 4GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz 32 28 0.90GHz 24 1.80GHz 2.40GHz 20 3.00GHz 4.00GHz G [dB] 1 0.8 0.6 16 5.00GHz 6.00GHz 12 8 0.4 0.2 0 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 c 15 I [mA] 20 25 30 V CE [V] Noise figure F = (IC ) VCE = 3V, f = 1.8 GHz Noise figure F = (f) VCE = 3V, ZS = ZSopt 2 1.8 1.2 1.6 1.4 1.2 F [dB] 1 ZS = 50 0.8 F [dB] 1 0.8 0.6 0.4 ZS = ZSopt 0.6 0.4 I = 25mA C I = 8.0mA C 0.2 0.2 0 0 0 5 10 c 15 I [mA] 20 25 30 0 1 2 3 f [GHz] 4 5 6 7 6 2005-10-17 BFR740L3 Source impedance for min. noise figure vs. frequency VCE = 3 V, I C = 8 mA / 25 mA 1 0.5 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -1 0.1 0.2 0.3 0.4 0.5 I = 8.0mA c 1.5 2 3 4 5 3GHz 5GHz 2.4GHz 6GHz 1.8GHz 4GHz 1 1.5 2 0.9GHz 4 5 3 10 -10 -5 -4 -3 -2 -1.5 Ic = 25mA 7 2005-10-17 Package TSLP-3-8 BFR740L3 Package Outline Top view 0.39 +0.01 -0.03 0.05 MAX. Bottom view 0.6 0.05 0.5 0.035 1) 0.575 0.05 3 2 0.4 0.035 1) 1 3 1 2 0.35 0.05 Pin 1 marking 2 x 0.15 0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.6 0.38 R0.19 0.45 0.2 0.5 0.35 0.95 1 0.255 0.2 0.225 0.225 0.15 Copper Solder mask R0.1 0.2 0.17 Stencil apertures Marking Layout Type code Laser marking Standard Packing Reel o180 mm = 15.000 Pieces/Reel 4 1.16 0.5 Pin 1 marking 0.76 8 0.315 2 x 0.25 0.035 1) 10.05 8 2005-10-17 BFR740L3 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2005-10-17 |
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